CHA7012_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

CHA7012
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7012 chip is a monolithic two-stage
GaAs high power amplifier designed for X band
applications.
This device is manufactured using a GaInP
HBT process, including, via holes through the
substrate and air bridge. A nitride layer protects
the transistors and the passive components.
Special heat removal techniques are
implemented to guarantee high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and DC
grounded
-bond pads and back side are gold plated for
compatibility with eutectic die attach method
and thermosonic or thermo compression
bonding process.
Main Features
Frequency band: 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing circuit
Chip size: 5.00 x 3.68 x 0.1mm
Main Characteristics
TI Vc TO
TTL
Cir c uit
Vctrl Vc Vc
Bia s ing
Cir c uit
IN
OUT
TTL
Cir c uit
Bia s ing
Cir c uit
TI Vc TO
44
PAE@3dBc (%)
40
Vctrl Vc Vc
36 ^{Pout@3dBc(dBm}
32
28
Linear Gain (Pin=0dBm)
24
20
16
9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6
Frequency ( GHz)
Pout & PAE @3dBc and Linear Gain @ 25°C
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Fop Operating frequency range
9.2
Psat Saturated output power @ 25°C
9
P_3dBc Output power @ 3dBc @ 25°C
7
G Small signal gain @ 25°C
20
Top _{Operating temperature range}
-40
Max Unit
10.4 GHz
W
W
dB
+80 °C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70129082- 23 March 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]