CHA4107-99F_15 Datasheet, PDF (8/10 Pages) United Monolithic Semiconductors – 4.5-6.5GHz Medium Power Amplifier

CHA4107-99F
4.5-6.5GHz Medium Power Amplifier
Recommended assembly plan
Vg
Vd
Vd
Vg
C1=100pF
C2=10nF
Pads G1A (pin 5) & G2A (pin 8) are connected inside the chip, The CHA4107 could be used
without G2A bias. There is a resistor bridge inside the chip. This one generates the correct
value of G1A Bias. Equivalent RF Wire Bonding: 0.2nH (typical length of 200µm for a 25µm
diameter wire).
Bonding recommendations
Port
IN
OUT
Vg
Vd
Connection
Inductance (Lbonding) = 0.2nH
1 gold wire with diameter of 25µm
Inductance (Lbonding) = 0.2nH
1 gold wire with diameter of 25µm
Inductance  1nH
Inductance  1nH
External capacitor
C1 ~ 100pF, C2 ~ 10nF
C1 ~ 100pF
Ref. : DSCHA41074188 - 07 Jul 14
8/10
Specifications subject to change without notice
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