CHA4107-99F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 4.5-6.5GHz Medium Power Amplifier

CHA4107-99F
4.5-6.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4107-99F is a monolithic two stage
power amplifier designed for C-Band
applications.
The MPA provides typically 26dBm output
power associated to 35% power added
efficiency at 3dBcomp.
IN
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography. It is available
in chip form.
Vg
Vd1
Vd2
OUT
Main Features
■ Frequency band: 4.5-6.5GHz
■ 26dBm @ 3dBcomp
■ 24.5 dB Linear Gain
■ High PAE: 35% for +5dBm input power
■ DC bias: Vd=8V@Id=115mA
■ Chip size 2.37x1.5x0.07mm
Main Characteristics
Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12%
Symbol
Parameter
Min Typ Max
Freq Frequency range
4.5
6.5
Gain Linear Gain
24.5
NF Noise Figure
5
Pout Output Power @ 3dB comp.
26
Unit
GHz
dB
dB
dBm
Ref. : DSCHA41074188 - 07 Jul 14
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]