CHA4107-99F_15 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 4.5-6.5GHz Medium Power Amplifier

CHA4107-99F
4.5-6.5GHz Medium Power Amplifier
Electrical Characteristics
Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12%
Symbol
Parameter
Min Typ Max
Freq
Frequency range
4.5
6.5
Gain Linear Gain
24.5
NF
Noise Figure
5
RLin
Input Return Loss
13
RLout Output Return Loss
8
P_1dBc Output power @ 1dBcomp
25
P_3dBc Output power @ 3dBcomp
26
PAE_3dBc Power Added Efficiency @ 3dBc
35
Id_3dBc Supply drain current @ 3dBc
130
Vd1, Vd2 Drain supply voltage
8
Id
Supply quiescent current (1)
115
Vg
Gate supply voltage
-0.8
These values are representative of on-Jig measurements.
(1) _{Parameter can be adjusted by tuning of Vg.}
Unit
GHz
dB
dB
dB
dB
dBm
dBm
%
mA
V
mA
V
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Cmp
Parameter
Compression level ⁽²⁾
Values
Unit
6
dB
Vd
Supply voltage
9.5
V
Id
Supply quiescent current
250
mA
Id_sat
Supply current in saturation
350
mA
Vg
Supply voltage
[-3.0; -0.4]
V
Tj
Maximum junction temperature
175
°C
Tstg
Storage temperature range
-55 to +150
°C
Top
Operating temperature range
-40 to +85
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{For higher compression the level limit can be increased by decreasing the voltage Vd}
using the rate 0.5V/dBcomp.
Ref. : DSCHA41074188 - 07 Jul 14
2/10
Specifications subject to change without notice
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