CHA3666_15 Datasheet, PDF (8/8 Pages) United Monolithic Semiconductors – 6-17GHz Low Noise Amplifier

CHA3666
6-17GHz Low Noise Amplifier
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. The
internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1
1.5K
Vd2
3.1K
40
2.5
0.3K
0.3K
RFin
90
90
RFout
20
20
8
P1
P2
N2
Two standard biasing:
Low Noise and low consumption:
Low Noise and higher output power
Vd1=Vd2 = 4V and P1, N2 grounded.
P2 pads non connected (NC).
Idd = 80mA & Pout-1dB = 17dBm Typical.
Vd1=Vd2 = 4V and P1, P2 grounded.
N2 pads non connected (NC).
Idd = 85mA & Pout-1dB = 17.5dBm Typical.
Ordering Information
Chip form :
CHA3666-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsIbility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA3666-8108 - 17 Apr 08
8/8
Specifications subject to change without notice
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