CHA3666_15 Datasheet, PDF (4/8 Pages) United Monolithic Semiconductors – 6-17GHz Low Noise Amplifier

CHA3666
6-17GHz Low Noise Amplifier
Typical on wafer Measured Performance
Temp = +25°C
Vd1=Vd2= +4V - Pads: P1, N2 = GND - Id=80mA Typical
Measurements on wafer (without bonding wires at the RF ports)
S parameters versus frequency
25
20
S21
15
10
5
S11
0
-5
-10
-15
-20
S22
-25
-30
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
NF versus frequency
6
5,5
5
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
4
6
8
10
12
14
16
18
Frequency (GHz)
Ref. : DSCHA3666-8108 - 17 Apr 08
4/8
Specifications subject to change without notice
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