CHA3666_15 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 6-17GHz Low Noise Amplifier

CHA3666
6-17GHz Low Noise Amplifier
Electrical Characteristics
Temp = +25°C, Pads: P1, N2 = GND (1)
Symbol
Fop
G
∆G
NF
IS11I
IS22I
IP3
P1dB
Vd
Id
Parameter
Operating frequency range
Gain (2)
Gain flatness
Noise figure (2)
Input return loss (2)
Ouput return loss (2)
3rd order intercept point (2)
Output power at 1dB gain comp.(2) (3)
Drain bias voltage
Drain bias current
Min
6
19
15
60
Typ
21
±0.5
1.8
2.5:1
2.0:1
26
17
4
80
Max
17
2
2.7:1
2.2:1
100
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
V
mA
(1) The other pads are not connected
(2) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.
(3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 non-
connected. In this case Id is typically 85mA
Absolute Maximum Ratings (1)
Temp = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Pin
RF input power
10
dBm
Top Operating temperature range (chip backside)
-40 to +85
°C
Tj
Junction temperature
175
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA3666-8108 - 17 Apr 08
2/8
Specifications subject to change without notice
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