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CHK040A-SOA Datasheet, PDF (3/14 Pages) United Monolithic Semiconductors – 40W Power Packaged Transistor
40W Power Packaged Transistor
CHK040A-SOA
RF Characteristics (Pulsed)
Tcase= +25°C, Pulse mode (1), F = 3GHz, VDS=50V, ID_Q=300mA
Symbol
Parameter
Min Typ Max Unit
GSS Small Signal Gain
PSAT Saturated Output Power
16
18
dB
45
55
W
PAE Max Power Added Efficiency
55
60
%
GPAE_MAX Associated Gain at Max PAE
13
dB
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 25% frequency band around 3GHz was
demonstrated using the reference board 61499547 presented hereafter.
Absolute Maximum Ratings
Tcase= +25°C(1), (2), (3)
Symbol
Parameter
VDS
VGS_Q
IG_MAX
IG_MIN
Drain-Source Voltage
Gate-Source Voltage
Maximum Gate Current in forward mode
Maximum Gate Current in reverse mode
ID_MAX
PIN
Tj
Maximum Drain Current
Maximum Input Power (typical)
Junction Temperature
TSTG
TCase
Storage Temperature
Case Operating Temperature
Rating
60
-10, +2
72
-12
6
39
220
-55 to +150
See note
Unit
V
V
mA
mA
A
dBm
°C
°C
°C
Note
(6)
(4)
(5)
(4)
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) Max junction temperature must be considered
(5) @3GHz - Linked to and limited by IG_MAX & IG_MIN values
(6) VGS_Q max limited by ID_MAX and IG_MAX values
Ref. : DSCHK040ASOA3021 - 21 Jan 13
3/14
Specifications subject to change without notice
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