CHK040A-SOA Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 40W Power Packaged Transistor

40W Power Packaged Transistor
CHK040A-SOA
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_DS
V_{GS_Q}
Drain to Source Voltage 20
50
Gate to Source Voltage
-1.8
V
V V_D=50V, I_{D_Q}=300mA
I_{D_Q}
I_{D_MAX}
Quiescent Drain Current
Drain Current
0.3
1
A V_D=50V
2
(1)
A V_D=50V,
Compressed mode
I_{G_MAX}
Gate Current (forward
mode)
0
24 mA Compressed mode
T_{j_MAX} Junction temperature
(1) _{Limited by dissipated power}
200 °C
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
I_{D_SAT}
I_{G_leak}
Pinch-Off Voltage
-3
-2
Saturated Drain Current
8 ⁽¹⁾
Gate Leakage Current -3
(reverse mode)
-1
V V_D=50V, I_D= I_DSS /100
A V_D=7V, V_G=2V
mA V_D=50V, V_G=-7V
V_BDS
Drain-Source
Break-down Voltage
200
V V_G=-7V, I_D=20mA
R_TH
Thermal Resistance
2.85
°C/W
(1) _{For information, limited by ID_MAX , see on Absolute Maximum Ratings}
RF Characteristics (CW)
Tcase= +25°C, CW mode, F = 3GHz, V_DS=50V, I_{D_Q}=300mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
15
17
40
50
50
55
-
dB
-
W
-
%
G_{PAE_MAX} Associated Gain at Max PAE
12
-
dB
Ref. : DSCHK040ASOA3021 - 21 Jan 13
2/14
Specifications subject to change without notice
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