CHK040A-SOA Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 40W Power Packaged Transistor

CHK040A-SOA
40W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK040A-SOA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication
The CHK040A-SOA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK040A-SOA is available in a ceramic-
metal flange power package providing low
parasitic and low thermal resistance.
Main Features
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power: > 45W
■ High Efficiency: up to 70%
■ DC bias: V_DS =50V @ I_{D_Q} =300mA
■ MTTF > 10⁶ hours @ Tj=200°C
■ RoHS Flange Ceramic package
Main Electrical Characteristics
V_DS = 50V, I_{D_Q} = 300mA, Freq=3GHz
Pulsed mode
60
3.3
55
Pulsed Mode at 3GHz
PAE
3
50
2.7
45
Pout 2.4
40
2.1
35
1.8
30
Id
1.5
25
20
1.2
15
0.9
10
Gain
0.6
5
0.3
0
0
12 14 16 18 20 22 24 26 28 30 32 34 36 38
Input Power (dBm)
Intrinsic performances of the packaged device
Tcase= +25°C, Pulsed mode, F = 3GHz, V_DS=50V, I_{D_Q}=300mA
Symbol
Parameter
Min Typ Max Unit
G_SS Small Signal Gain
16
18
-
dB
P_SAT Saturated Output Power
45
55
-
W
PAE Max Power Added Efficiency
55
60
-
%
G_{PAE_MAX} Associated Gain at Max PAE
13
-
dB
Ref. : DSCHK040ASOA3021 - 21 Jan 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]