CHK025A-SOA Datasheet, PDF (3/14 Pages) United Monolithic Semiconductors – 25W Power Packaged Transistor

25W Power Packaged Transistor
CHK025A-SOA
RF Characteristics (Pulsed)
Tcase= +25°C, Pulse mode ⁽¹⁾, F = 4GHz, V_DS=50V, I_{D_Q}=200mA
Symbol
Parameter
Min Typ Max Unit
G_SS
Small Signal Gain
P_SAT Saturated Output Power
15
17
dB
30
38
W
PAE Max Power Added Efficiency
55
60
%
G_{PAE_MAX} Associated Gain at Max PAE
13
dB
(1) _{Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and}
1µs offset between RF and DC pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 20% frequency band around 4GHz was
demonstrated using the reference board 61500252 presented hereafter.
Absolute Maximum Ratings ⁽¹⁾
Tcase= +25°C^{(1), (2), (3)}
Symbol
Parameter
V_DS
V_{GS_Q}
I_{G_MAX}
I_{G_MIN}
Drain-Source Voltage
Gate-Source Voltage
Maximum Gate Current in forward mode
Maximum Gate Current in reverse mode
I_{D_MAX}
P_IN
T_j
T_STG
Maximum Drain Current
Maximum Input Power (typical)
Junction Temperature
Storage Temperature
T_Case
Case Operating Temperature
Rating
60
-10, +2
48
-8
4
37
220
-55 to +150
See note
Unit
V
V
mA
mA
A
dBm
°C
°C
°C
Note
(6)
(4)
(5)
(4)
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
(3) _{The given values must not be exceeded at the same time even momentarily for any}
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) _{Max junction temperature must be considered}
(5) _{@4GHz -Linked to and limited by IG_MAX & IG_MIN values}
(6) _{VGS_Q max limited by ID_MAX and IG_MAX values}
Ref. : DSCHK025ASOA3021 - 21 Jan 13
3/14
Specifications subject to change without notice
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