CHK025A-SOA Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 25W Power Packaged Transistor

25W Power Packaged Transistor
CHK025A-SOA
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_DS
V_{GS_Q}
Drain to Source Voltage 20
50
Gate to Source Voltage
-1.9
V
V V_D=50V, I_{D_Q}=200mA
I_{D_Q}
I_{D_MAX}
Quiescent Drain Current
Drain Current
0.2 0.65 A V_D=50V
1.3
(1)
A V_D=50V,
Compressed mode
I_{G_MAX}
Gate Current (forward
mode)
0
16 mA Compressed mode
T_{j_MAX} Junction temperature
(1) _{Limited by dissipated power}
200 °C
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
I_{D_SAT}
I_{G_leak}
Pinch-Off Voltage
-3
-2
-1
V V_D=50V, I_D= I_DSS /100
Saturated Drain Current
5.4 ⁽¹⁾
A V_D=7V, V_G=2V
Gate Leakage Current -2
(reverse mode)
mA V_D=50V, V_G=-7V
V_BDS
Drain-Source
Break-down Voltage
200
V V_G=-7V, I_D=20mA
R_TH
Thermal Resistance
3.7
°C/W
(1) _{For information, limited by ID_MAX , see on Absolute Maximum Ratings}
RF Characteristics (CW)
Tcase= +25°C, CW mode, F = 4GHz, V_DS=50V, I_{D_Q}=200mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
14
16
28
35
50
55
-
dB
-
W
-
%
G_{PAE_MAX} Associated Gain at Max PAE
12
-
dB
Ref. : DSCHK025ASOA3021 - 21 Jan 13
2/14
Specifications subject to change without notice
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