CHK025A-SOA Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 25W Power Packaged Transistor

CHK025A-SOA
25W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK025A-SOA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication.
The CHK025A-SOA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK025A-SOA is available as a
ceramic-metal flange power package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 5GHz
■ Pulsed and CW operating modes
■ High power: > 25W
■ High Efficiency: up to 70%
■ DC bias: V_DS =50V @ I_{D_Q} =200mA
■ MTTF > 10⁶ hours @ Tj=200°C
■ RoHS Flange Ceramic package
V_DS = 50V, I_{D_Q} = 200mA, Freq=4GHz
Pulsed mode
PAE
Pout
Id
Gain
Main Electrical Characteristics
Intrinsic performances of the packaged device
Tcase= +25°C, Pulsed mode, F = 4GHz, V_DS=50V, I_{D_Q}=200mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
Small Signal Gain
Saturated Output Power
15
17
dB
30
38
W
PAE Max Power Added Efficiency
55
60
%
G_{PAE_MAX} Associated Gain at Max PAE
13
dB
Ref. : DSCHK025ASOA3021 - 21 Jan 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]