CHA6552-QJG_15 Datasheet, PDF (3/18 Pages) United Monolithic Semiconductors – 5.8- 8.5GHz Power Amplifier

5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5
V
Idq
Quiescent drain bias current
2.5
A
Vg
Gate bias voltage
Pin
Maximum peak input power overdrive ⁽²⁾
-2 to 0
20
V
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VD1
13, 38
VD2
16, 35
VD3
19, 32
VG1
14, 37
VG2
17, 34
VDC1,2 23, 29
Parameter
DC Drain voltage 1^st stage
DC Drain voltage 2^nd stage
DC Drain voltage 3^rd stage
DC Gate voltage 1^st & 2^nd stage
DC Gate voltage 3^rd stage
DC Detector biasing voltage
Values Unit
7
V
7
V
7
V
-0.4
V
-0.4
V
7
V
Ref. : DSCHA6552-QJG4147 - 27 May 14
3/18
Specifications subject to change without notice
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