CHA6552-QJG_15 Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 5.8- 8.5GHz Power Amplifier

CHA6552-QJG
5.8- 8.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6552-QJG is a three stage
monolithic GaAs high power circuit producing
YYWWG
4 Watt output power.
UMS A366878A
UMS_UMS
A366878A _{It is designed for Point to Point radio and}
A6^Y5^Y52^WWG
YYWWG ^{commercial communication systems.}
The circuit is manufactured with a pHEMT
YYWW^AU^36M^6878SA
process, 0.5µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
Pout & PAE versus frequency
40
40
■ Broadband performances: 5.8- 8.5GHz
39
38
■ 36dBm saturated power
38
UMS ^{■ 35dBm at 1dB compression}
37
36
■ 22dB gain
35
■ DC bias: Vd = 7.0Volt @ Id = 1.8A
34
■ QFN6x6
33
■ MSL3
32
31
30
5
P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A
6
7
8
9
Frequency (GHz)
36
34
32
30
28
26
24
22
20
10
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5.8
8.5 GHz
A3687A ^Gain
Psat
OIP3
Linear Gain
Saturated output power
Output IP3
22
dB
36
dBm
45
dBm
Ref. : DSCHA6552-QJG4147 - 27 May 14
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]