CHA6552-QJG_15 Datasheet, PDF (2/18 Pages) United Monolithic Semiconductors – 5.8- 8.5GHz Power Amplifier

CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Fop Operating frequency range
G
Small Signal Gain
ΔG Gain variation in temperature
P1dB Output power @1dB compression
Psat Saturated output power
OIP3 Output IP3
PAE PAE at 1dB compression
Rlin Input Return Loss
Rlout
Dr ⁽¹⁾
Output Return Loss
Detection dynamic range
Vdetect1 Voltage detection Vref1-Vdet1 up to Psat
Vdetect2 Voltage detection Vref2-Vdet2 up to Psat
Vg
DC Gate voltage
Idet Detector current
Idq Total quiescent drain current
Min
Typ
Max Unit
5.8
8.5 GHz
22
dB
+/-0.035
dB/°C
35
dBm
36
dBm
45
dBm
22
%
12
dB
15
dB
30
dB
5 to 1200
mV
5 to 1200
mV
-0.4
V
3
mA
1800
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) _{Dr: Output power detection up to Psat.}
Ref. : DSCHA6552-QJG4147 - 27 May 14
2/18
Specifications subject to change without notice
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