CHA5356-QGG_15 Datasheet, PDF (3/16 Pages) United Monolithic Semiconductors – 17.7-23.6GHz Packaged HPA

17.7-23.6GHz Packaged HPA
CHA5356-QGG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.5V
V
Id
Drain bias quiescent current
900
mA
Vg
Gate bias voltage
Pin
Maximum peak input power overdrive ⁽²⁾
-2 to +0.4
+20
V
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
Vd1
28
Vd2
26
Vd3
24, 12
Vg1
9
Vg2
10
Vg3
25, 11
VDC
22
Parameter
DC Drain voltage 1^st stage
DC Drain voltage 2^nd stage
DC Drain voltage 3^rd stage
DC Gate voltage 1^st stage
DC Gate voltage 2^nd stage
DC Gate voltage 3^rd stage
DC Detector voltage
Values Unit
6.0
V
6.0
V
6.0
V
-0.75
V
-0.75
V
-0.75
V
6.0
V
Ref. : DSCHA5356-QGG4273- 30 Sep 14
3/16
Specifications subject to change without notice
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