CHA5356-QGG_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 17.7-23.6GHz Packaged HPA

CHA5356-QGG
17.7-23.6GHz Packaged HPA
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5356-QGG is a three stage
monolithic GaAs high power amplifier, which
integrates a power detector.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
U_UM_UMS_MSS
AA_A3536₃568₆6₆₈78₇₈A_A
YYYYWYWWWWWGG
Main Features
■ Broadband performances: 17.7-23.6GHz
35
Saturated power
■ 33dBm Pout in saturation
■ 38dBm OIP3
■ 19dB Gain
■ 30dB power detection dynamic
■ DC bias: Vd=6.0Volt@Id=700mA
■ QGG-QFN5x5
■ MSL3
UMS34
33
32
31
30
29
28
17
-40 °C
25 °C
85 °C
18
19
20
21
22
Frequency (GHz)
23
24
Main Electrical Characteristics
Tamb.= +25°C
A3687A Symbol
Freq
Gain
Psat
OIP3
Parameter
Frequency range
Linear Gain
Saturated Output Power
Output IP3
Ref. : DSCHA5356-QGG4273- 30 Sep 14
1/16
Min Typ Max Unit
17.7
23.6 GHz
19
dB
33
dBm
38
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]