English
Language : 

CHA5350-99F_15 Datasheet, PDF (3/12 Pages) United Monolithic Semiconductors – 17-24GHz Medium Power Amplifier
17-24GHz Medium Power Amplifier
CHA5350-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd1,2,3,4
Id
Drain bias voltage
Drain bias current (1)
8V
V
650
mA
Vg
Gate bias voltage
Pin
Maximum peak input power overdrive (2)
-2 to -0.3
+15
V
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
Parameter
Vg
10
DC gate Voltage
Vd1,2,3,4
Id
3, 5, 7
DC drain Voltage
DC Drain current controlled with Vg (1)
(1) To be adjusted in order to achieve Id: 300mA
Values Unit
-0.7
V
6
V
300
mA
Ref. : DSCHA53503018 - 18 Jan 13
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34