CHA5350-99F_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 17-24GHz Medium Power Amplifier

CHA5350-99F
17-24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd_1,2,3,4 = +6V, Idq = 300mA
Symbol
Freq
Gain
Gain_T
RLin
RLout
P_-1dB
P_sat
PAE_ P_-1dB
Id_ P_-1dB
Id_ P_sat
OIP3
Vd_1,2,3,4
Id
Vg
Parameter
Frequency range
Linear Gain
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Output Power @1dB gain compression
Saturated output power
Power added efficiency @1dB gain comp.
Drain current @1dB gain compression
Drain current @ saturation
Output third order interception point on the
frequency range 17-21 GHz
Output third order interception point on the
frequency range 21-24 GHz
Drain supply voltage
Drain quiescent current
Gate supply voltage
Min Typ Max Unit
17
24 GHz
26
dB
-0.035
dB/°C
-17
dB
-12
dBm
26.5
dBm
27
dBm
25
%
350
mA
400
mA
35.5
dBm
34
dBm
6
V
300
mA
-0.7
V
These values are representative of measurements in test fixture that are made with bonding
wires at the RF ports.
Wire bonding at RF accesses: 0.3nH, typically.
Ref. : DSCHA53503018 - 18 Jan 13
2/12
Specifications subject to change without notice
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