CHA5350-99F_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 17-24GHz Medium Power Amplifier

CHA5350-99F
17-24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5350-99F is a four stage monolithic
Vd1 Vd2,3 Vd4
MPA that typically provides an output power
of 26.5dBm at 1dB gain compression
associated to a high IP3 output of 34dBm.
It is designed for a wide range of In
Out
applications, from professional to commercial
STG1 STG2 _{STG3 STG4}
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
Vg
It is available in chip form.
Main Features
■ Broadband performances: 17-24GHz
■ Linear gain = 26dB
■ Pout = 26.5dBm @ 1dB comp.
■ High OIP3 = 34dBm
■ DC bias: Vd=6Volt @ Id=300mA
■ Chip size 2.38x1.46x0.07mm
Pout +IP3
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P_-1dB
OIP3
Output Power @1dB gain compression
Output third order interception point
Min Typ Max Unit
17
24 GHz
26
dB
26.5
dBm
34
dBm
Ref. : DSCHA53503018 - 18 Jan 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]