CHA3656-QAG_15 Datasheet, PDF (3/14 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

5.8-17GHz Low Noise Amplifier
CHA3656-QAG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA3656-QAG
Recommended max. junction temperature (Tj max)
:
115 °C
Junction temperature absolute maximum rating
:
175 °C
Max. continuous dissipated power (Pdiss. Max.)
:
0,2 W
=> Pdiss. Max. derating above Tcase⁽¹⁾= 85 °C :
7 mW/°C
Junction-Case thermal resistance (Rth J-C)⁽²⁾
: <147 °C/W
Minimum Tcase operating temperature⁽³⁾
:
-40 °C
Maximum Tcase operating temperature⁽³⁾
:
85 °C
Minimum storage temperature
:
-55 °C
Maximum storage temperature
:
150 °C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
0,25
Tcase
0,2
0,15
0,1
Pdiss. Max. @Tj <Tj max (W)
0,05
-50
-25
0
25
50
Tcase (°C)
0
75
100 125
Example: QFN 16L 3x3
Location of temperature
reference point (Tcase)
on package's bottom side
6,4
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
3/14
Specifications subject to change without notice
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