CHA3656-QAG_15 Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

CHA3656-QAG
5.8-17GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +3.0V, P1, N2 = GND ⁽¹⁾
Symbol
Freq
Gain
NF
Parameter
Frequency range
Linear Gain
Noise Figure
Min Typ Max Unit
5.8
17.0 GHz
18 20.0
dB
1.7
2
dB
RL in Input return loss
7
8
RL out Output return loss
9
10
IP3
3rd order intercept point (Pin DCL = -20 dBm)
24
dBm
P1dB Output power at 1dB gain comp
13
14
dBm
D1, D2 Drain bias voltage
3
4
V
Id
Drain bias current
68
90 mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) _{Pin F1 & P2 are not connected}
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5V
V
Pin RF input power
Tj
Junction temperature ⁽²⁾
10
dBm
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
D1
16
D2
14
P1, N2
5, 8
F1, P2
6, 7
Parameter
DC Drain voltage 2^nd stage
DC Drain voltage 1st stage
DC Gate voltage
DC Gate voltage
Values
Unit
3
V
3
V
GND
Not connected
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
2/14
Specifications subject to change without notice
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