CHA3656-QAG_15 Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

CHA3656-QAG
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3656-QAG is a two-stage self-
biased wide band monolithic low noise
amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UM_UMS_SUMS
A36^A68³78^6AA^53666878A
YY^YW^YWW^WYYG^WWG
Main Features
■ Broadband performances: 5.8- 17GHz
■ 1.7dB noise figure
■ 24dBm 3^rd order intercept point
■ 14dBm power at 1dB compression
■ 20dB gain
■ Low DC power consumption
■ 16L-QFN3X3 SMD package
Gain & Noise figure (dB)
28
26
24
22
20
18
16
14
12
Gain
NF
10
8
6
4
2
0
5
6
7
8
9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
P1dB Output Power @1dB comp.
Min Typ Max Unit
5.8
17.0 GHz
18
20.0
dB
1.7
2
dB
13.0 14.0
dBm
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]