CHA2063A_15 Datasheet, PDF (3/10 Pages) United Monolithic Semiconductors – 7-13GHz Low Noise Amplifier

7-13GHz Low Noise Amplifier
CHA2063a
Electrical Characteristics
Chip form
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G
Gain
∆G
Gain flatness
NF Noise figure 7-8 Ghz
Noise figure 8-12 GHz
VSWRin Input VSWR
VSWRout Ouput VSWR
P1dB
Output power at 1dB gain
compression F=10 GHz
IP3 3rd order intercept point
Id
Drain bias current
Test
Condi
Min
tions
(1)
7
17
(1)
(1)
Typ Max
12
19
±2
2.5 3.0
2.0 2.5
2.0:1 3.0:1
2.0:1 3.0:1
8
18
40
80
Unit
Ghz
dB
dB
dB
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and
output bonding wires, the indicated parameter values are close to those of the CHA2063a
packaged product.
Ref. : DSCHA20630096 -05-Apr-00
3/10
Specifications subject to change without notice
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