CHA2063A_15 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 7-13GHz Low Noise Amplifier

CHA2063a
Electrical Characteristics
Package form
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G
Gain
∆G
Gain flatness
NF Noise figure 7-8 Ghz
Noise figure 8-13 GHz
VSWRin Input VSWR
VSWRout Ouput VSWR
P1dB
Output power at 1dB gain
compression F=10 GHz
IP3 3rd order intercept point
Id
Drain bias current
7-13GHz Low Noise Amplifier
Test
Condi
Min
tions
7
16
Typ Max
13
19
±2
2.5 3.0
2.0 2.5
2.0:1 2.5:1
2.0:1 2.5:1
8
18
40
60
Unit
Ghz
dB
dB
dB
dBm
dBm
mA
Absolute Maximum Ratings
Tamb = +25°C
Symbol
Parameter
Vd
Drain bias voltage (3)
Pin
Maximum peak input power overdrive (2)
Top Operating temperature range
Tstg Storage temperature range
Values
5.0
+15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3)See chip biasing option page 9/10
Ref. : DSCHA20630096 -05-Apr-00
2/10
Specifications subject to change without notice
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