CHE1260-QAG Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 12-27GHz Bidirectionnal Detector

CHE1260-QAG
12-27GHz Detector
Electrical Characteristics
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
F
Frequency range
IL
Insertion Loss
Cd
Coupler Directivity
Dr
Dynamic Range
Pr
Power Range:
12 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
(for transmitted and/or reflected power)
Vdetect_I Voltage detection from transmitted power
Vref_I – Vdet_I
From Pr_min to Pr_max
Vdetect_R Voltage detection from reflected power
Vref_R – Vdet_R
From Pr_min to Pr_max
RLin
RLout
VDC
IDC
Input return loss
Output return loss
Bias Voltage
Bias Current (on ports DC_I or DC_R)
Min Typ Max Unit
12
27 GHz
1
dB
15
dB
30
dB
-1
-3
-6
dBm
-8
20
to
mV
2200
20
to
mV
2200
-12
dB
-12
dB
4.5
V
33
µA
These values are representative of on board measurements as defined page 8, with 100kΩ
resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 9).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
VDC Bias voltage (on ports DC_I and DC_R)
6
V
Top
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
P_max ^{Maximum power}
(for transmitted and/or reflected power)
30
dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1260-QAG8057 - 22 Feb 08
2/10
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Tel.: [phone] - Fax: [phone]
Specifications subject to change without notice