CHE1260-QAG Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 12-27GHz Bidirectionnal Detector

CHE1260-QAG
RoHS COMPLIANT
12-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHE1260-QAG is a bidirectionnal
detector that integrates a passive
bidirectionnal coupler, two matched detector
diodes and two reference diodes.
It allows the measurement of transmitted and
reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically commercial communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is supplied in leadless SMD package.
RF_in
Vref_R _{DC_R} Vdet_R
RF_out
Vdet_I _{DC_I} Vref_I
Main Features
■ Wide frequency range 12-27GHz
■ Bidirectionnal detection
■ 30dB dynamic range
■ ESD protected
■ 16L-QFN3x3 SMD package
10000
Incident power detection (mV)
1000
100
12GHz
22GHz
17GHz
27GHz
Main Characteristics
10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Incident power (dBm)
8 10 12 14 16 18 20
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
Min Typ Max
F
Frequency range
IL Insertion Loss
Dr Dynamic Range
12
27
1
30
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Unit
GHz
dB
dB
Ref : DSCHE1260-QAG8057 - 22 Feb 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]