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| PMBF170 Datasheet, PDF (4/4 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor | |||
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CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed
Drain-source breakdown voltage
ID = 10 µA; VGS = 0
Drain-source leakage current
VDS = 25 V; VGS = 0
VDS = 48 V; VGS = 0
Gate-source leakage current
VGS = 15 V; VDS = 0
Gate-source cut-off voltage
ID = 1 mA; VDS = VGS
Drain-source on-resistance
ID = 200 mA; VGS = 10 V
Transfer admittance
ID = 200 mA; VDS = 10 V
Input capacitance
VDS = 10 V; VGS = 0 V; f = 1 MHz
Output capacitance
VDS = 10 V; VGS = 0 V; f = 1 MHz
Feedback capacitance
VDS = 10 V; VGS = 0 V; f = 1 MHz
Switching times
VGS = 0 to 10 V; ID = 200 mA ; VDD = 50 V
Product specification
PMBF170
V(BR) DSS
min.
typ.
60 V
90 V
IDSS
IDSS
IGSS
VGS(th)
max.
max.
max.
min.
max.
RDS(on)
typ.
max.
 Yfs 
min.
typ.
Ciss
typ.
max.
Coss
typ.
max.
Crss
typ.
max.
ton
max.
toff
max.
500 nA
1 µA
10 nA
0.8 V
3.0 V
2.5 â¦
5.0 â¦
100 mS
200 mS
25 pF
40 pF
22 pF
30 pF
6 pF
10 pF
10 ns
15 ns
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