PMBF170 Datasheet, PDF (3/4 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

Product specification
PMBF170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
V_DS
± V_GSO
I_D
Drain current (peak)
I_DM
Total power dissipation up to
T_amb = 25 °C (note 1)
P_tot
Storage temperature range
T_stg
Junction temperature
T_j
max.
60 V
max.
20 V
max.
250 mA
max.
500 mA
max.
max.
300 mW (note 1)
250 mW (note 2)
−65 to +150 °C
max.
150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
From junction to ambient (note 2)
R_{th j-a}
=
R_{th j-a}
=
Notes
1. Mounted on ceramic substrate measuring 10 mm × 8 mm × 0.7 mm.
2. Mounted on printed-circuit board.
430 K/W
500 K/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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