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| PMBF170 Datasheet, PDF (2/4 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor | |||
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DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. Designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits with
applications in relay, high-speed and
line transformer drivers.
FEATURES
⢠Direct interface to C-MOS, TTL,
etc.
⢠High-speed switching
⢠No secondary breakdown
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up
to Tamb = 25 °C
Drain-source on-resistance
ID = 200 mA; VGS = 10 V
Transfer admittance
ID = 200 mA; VDS = 10 V
PINNING - SOT23
1 = gate
2 = source
3 = drain
Marking code:
PMBF170 = PKX
PIN CONFIGURATION
Product specification
PMBF170
VDS
± VGSO
ID
max.
max.
max.
Ptot
RDS(on)
| Yfs|
max.
typ.
max.
min.
typ.
60 V
20 V
250 mA
300 mW
2.5 â¦
5.0 â¦
100 mS
200 mS
handbook, halfpage
3
handbook, 2 columns
d
1
Top view
2
MSB003
g
MBB076 - 1 s
Fig.1 Simplified outline and symbol.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 4
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