FMY4A Datasheet, PDF (4/4 Pages) Rohm – Power management (dual transistors)

SMD Type
TransistIoCrs
Product specification
FMY4A
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.13 DC current gain vs.
collector current ( Ι )
500
0.5
Ta=100°C
VCE=5V
Ta=25°C
200
25°C
−55°C
100
0.2
IC/IB=50
0.1
20
10
50
0.05
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.14 DC current gain vs.
collector current ( ΙΙ )
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.15 Collector-emitter saturation
voltage vs. collector current
0.5
0.2
Ta=100°C
0.1
25°C
−55°C
0.05
IC/IB=10
0.5
0.2
Ta=100°C
25°C
−55°C
0.1
0.05
IC/IB=50
500
200
Ta=25°C
VCE=6V
0.02
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
0.01
0.2
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.16 Collector-emitter saturation
Fig.17 Collector-emitter saturation
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
100
50
−0.5 −1 −2
−5 −10 −20 −50 −100
EMITTER CURRENT : IE (mA)
Fig.18 Gain bandwidth product vs.
emitter current
20
10
Cib
5
Ta=25°C
f=1MHz
IE=0A
IC=0A
2
Cob
1
0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.19 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25°C
200
f=32MHZ
VCB=6V
100
50
20
10
−0.2
−0.5 −1 −2
−5 −10
EMITTER CURRENT : IE (mA)
Fig.20 Base-collector time constant
vs. emitter current
http://www.twtysemi.com
[e-mail]
4008-318-123
4 of 4