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FMY4A Datasheet, PDF (2/4 Pages) Rohm – Power management (dual transistors)
SMD Type
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Transistor Tr1
Collector-Base Breakdown Voltage
V(BR)CBO IC = -50 μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = -1 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IC = -50 μA, IC = 0
Collector cutoff current
ICBO VCB=-60V, IE=0
Emitter cutoff current
IEBO VEB=-6V, IC=0
DC current gain
hFE VCE=-6V, IC= -1mA
collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
Transistor Tr2
VCE(sat)
fT
Cob
IC = -50 mA; IB = -5 mA
IC = -2 mA; VCE = -12 V; f = 100 MHz
VCB=-12V, IE=0A, f=1MHz
Collector-Base Breakdown Voltage
V(BR)CBO IC = 50 μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IC = 50 μA, IC = 0
Collector cutoff current
ICBO VCB=60V, IE=0
Emitter cutoff current
IEBO VEB=7V, IC=0
DC current gain
hFE VCE=6V, IC= 1mA
collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC = 50 mA; IB = 5 mA
IC = 2 mA; VCE = 12 V; f = 100 MHz
VCB=12V, IE=0A, f=1MHz
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
Y4
TransistIoCrs
Product specification
FMY4A
Min Typ Max Unit
-60
V
-50
V
-6
V
-100 nA
-100 nA
120
560
-0.5 V
140
MHz
5
pF
60
V
50
V
7
V
100 nA
100 nA
120
560
0.4 V
180
MHz
3.5 pF
■ Typical Characteristics
Tr1 (PNP)
−50
Ta=100˚C
−20
25˚C
−40˚C
−10
−5
−2
−1
−0.5
VCE= −6V
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−10
Ta=25˚C
−35.0
−31.5
−8
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
IB=0
0
−0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (Ι)
−100
Ta=25˚C
−500
−80 −450
−400
−350
−300
−60
−40
−20
−250
−200
−150
−100
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (ΙΙ)
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