FMY4A Datasheet, PDF (3/4 Pages) Rohm – Power management (dual transistors)

SMD Type
TransistIoCrs
Product specification
FMY4A
500
Ta=25˚C
200
VCE= −5V
−3V
−1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (Ι)
500
Ta=100˚C
25˚C
200
−40˚C
100
50
−0.2 −0.5 −1 −2
VCE= −6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
−1
Ta=25˚C
−0.5
−0.2
−0.1
−0.05
IC/IB=50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
−1
−0.5
lC/lB=10
1000
500
Ta=25˚C
VCE= −12V
−0.2
200
Ta=100˚C
−0.1
25˚C
−40˚C
100
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
NPN Tr
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.10 Grounded emitter propagation
characteristics
100 _Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Grounded emitter output
characteristics ( Ι )
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.12 Grounded emitter output
characteristics ( ΙΙ )
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