IRF840 Datasheet, PDF (3/3 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

10
Pulsed
9
8
7
6
5
4
3
2
1
0
0
1
Output Characteristics
V = 10V、6V
GS
V =5.5V
GS
V =5V
GS
V =4.5V
GS
2
3
4
5
6
7
8
DRAIN TO SOURCE VOLTAGE V (V)
DS
9
10
1.0
T =25℃
a
0.9 Pulsed
R
DS(ON)
——
I
D
0.8
0.7
0.6
V =10V
GS
0.5
0.4
0.3
0.2
1
2
3
4
5
6
7
8
DRAIN CURRENT I (A)
D
8
Pulsed
I
S
——
V
SD
1
T =100℃
a
T =25℃
a
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.6
V =10V
DS
Pulsed
1.2
IRF840
Product specification
Transfer Characteristics
0.8
T =100℃
a
T =25℃
a
0.4
0.0
0
1
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE V (V)
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
R —— V
DS(ON)
GS
Pulsed
I =4.8A
D
T =100℃
a
T =25℃
a
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE V (V)
GS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Threshold Voltage
I =250uA
D
50
75
100
125
JUNCTION TEMPERATURE T (℃)
J
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