IRF840 Datasheet, PDF (1/3 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

Product specification
TO-220/ Plastic-Encapsulate MOSFETS
IRF840 MOSFET( N-Channel )
FEATURES
TO-220/
z Dynamic dv/dt Rating
z Repetitive Avalanche Rated
z Fast Switching
z Ease of Paralleling
z Simple Drive Requirement
1. GATE
2. DRAIN
3. SOURCE
Description
Third Generation HEXFETs from internation Rectifier provide the
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The low thermal resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted )
Symbol
Parameter
I_D
I_DM
P_D
V_GS
E_AS
I_AR
E_AR
dv/dt
R_θJA
T_J
T_STG
Continuous Drain Current, VGS @ 10 V T_C=25℃
T_C=100℃
Pulsed Drain Current (note 1 )
Power Dissipation
Gate-Souse Voltage
Single Pulse Avalanche Energy (note 2 )
Avalanche Current (note 1 )
Repetitive Avalanche Energy (note 1 )
Peak Diode Recovery dv/dt (note 3 )
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
8
5.1
32
2
±20
510
8
13
3.5
62.5
150
-55~+150
Units
A
A
A
W
V
mJ
A
mJ
V/ns
℃/W
℃
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3