IRF830 Datasheet, PDF (3/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

8
Pulsed
7
6
Output Characteristics
V = 6V、10V
GS
V =5.5V
GS
5
4
V =5V
GS
3
2
1
V =4.5V
GS
0
0
5
10
15
20
25
30
DRAIN TO SOURCE VOLTAGE V (V)
DS
3.0
T =25℃
a
Pulsed
2.5
R
DS(ON)
——
I
D
2.0
1.5
V =10V
GS
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
DRAIN CURRENT I (A)
D
4.5
Pulsed
I
S
——
V
SD
1
T =100℃
a
T =25℃
a
0.1
0.01
0.0
0.4
0.8
1.2
1.6
SOURCE TO DRAIN VOLTAGE V (V)
SD
2.0
V =10V
DS
Pulsed
1.6
IRF830
Product specification
Transfer Characteristics
1.2
T =100℃
a
T =25℃
a
0.8
0.4
0.0
0
1
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE V (V)
GS
R —— V
DS(ON)
GS
8
Pulsed
7
I =2.7A
D
6
5
4
3
T =100℃
a
2
1
T =25℃
a
0
3
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
5
4
I =250uA
D
3
2
1
0
25
50
75
100
125
JUNCTION TEMPERATURE T (℃)
J
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