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| IRF830 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance (note 4)
Forward transconductance (note 4)
Diode forward voltage
V(BR)DSS VGS=0V,ID=250µA
V(GS)th VDS=VGS, ID=250µA
lGSS
VDS=0V, VGS=±20V
IDSS
VDS=500V, VGS=0V
RDS(on) VGS=10V, ID=2.7A (note 4)
gfs
VDS=50V, ID=2.7A (note 4)
VSD
IS=4.5A, VGS=0V
500
2
2.5
Total gate charge
Gate-source charge
Qg
VDS=400V, VGS=10V,ID=3.1A
Qgs
Gate-drain charge
Qgd
Input capacitance (note 5)
Output capacitance (note 5)
Ciss
Coss
VDS=25V, VGS=0V,f=1MHz
Reverse transfer capacitance (note 5)
Crss
Turn-on delay time (note 4,5)
Rise time (note 4,5)
Turn-off delay time (note 4,5)
td(on)
tr
td(off)
VDD=250V,RD=79â¦,
ID=3.1A,RG=12â¦
Fall time (note 4,5)
tr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 24mH, IAS = 4.5A, VDD = 50V, RG = 25â¦, Starting TJ = 25°C.
3. ISD = 4.5A, di/dt = 300A/µs, VDD = V(BR)DSS, Starting TJ = 25°C.
4. Pulse Test : Pulse width â¤300µs, Duty cycle⤠2%.
5. These parameters have no way to verify.
Product specification
Typ
610
160
68
8.2
16
42
16
Max Unit
V
4
±100
nA
25
µA
1.5
â¦
S
1.6
V
38
5.0
nC
22
pF
nS
nS
nS
nS
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sales@twtysemi.com
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