IRF830 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

Product specification
TO-220/ Plastic-Encapsulate MOSFETS
IRF830 MOSFET( N-Channel )
FEATURES
. Dynamic dv/dt Rating
. Repetitive Avalanche Rated
. Fast Switching
. Ease of Paralleling
. Simple Drive Requirement
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
I_D @T_C=25℃
I_D @T_C=100℃
I_DM
Continuous Drain Current, V_GS @ 10 V
Continuous Drain Current, V_GS @ 10 V
Pulsed Drain Current (note 1)
P_D
Power Dissipation
R_θJA
V_GS
Thermal Resistance from Junction to Ambient
Gate-Souse Voltage
E_AS
Single Pulse Avalanche Energy (note2)
I_AR
Avalanche Current (note 1)
E_AR
Repetitive Avalanche Energy (note 1)
dv/dt
Peak Diode Recovery dv/dt (note 3)
T_J
Junction Temperature
T_stg
Storage Temperature
TO-220-3L
1
1. GATE
2. DRAIN
3. SOURCE
Value
4.5
2.9
18
2
62.5
±20
280
4.5
7.4
3.5
150
-55~+150
Units
A
A
A
W
℃/W
V
mJ
A
mJ
V/ns
℃
℃
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