S-808XXC Datasheet, PDF (15/26 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Product specification
S-808xxC Series
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta=25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage^*1
−V_DET

−V_DET(S) −V_DET(S) −V_DET(S)
×0.98
×1.02
V
1
Hysteresis width
V_HYS

−V_DET
×0.03
−V_DET
×0.05
−V_DET
×0.08
Current consumption
Operating voltage
Output current
I_SS
V_DD=3.5 V
S-80815 to 26 
0.8
2.4 µA 2
V_DD=4.5 V
S-80827 to 39 
0.8
2.4
V_DD=6.0 V
S-80840 to 56 
0.9
2.7
V_DD=7.5 V
S-80857 to 60 
0.9
2.7
V_DD

0.95

10.0 V 1
I_OUT
Output transistor, V_DD=1.2 V
Nch, V_DS=0.5 V S-80815 to 60
0.59
1.36
 mA 3
V_DD=2.4 V
S-80827 to 60
2.88
4.98

Leakage current
Response time
Detection voltage
temperature
coefficient^*2
I_LEAK
t_PLH
Output transistor,
Nch, V_DS=10.0 V, V_DD=10.0 V

∆ − VDET
∆Ta • −VDET
Ta=−40 °C to +85 °C


100 nA


60 µs 1

±100
±350
ppm/
°C
*1. −V_DET: Actual detection voltage value, −V_DET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) ^{∆ − VDET} mV/°C ^*1 = −VDET(S) Typ. V ^*2 × ^{∆ − VDET} ppm/°C ^*3 ÷ 1000
∆Ta
∆Ta • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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