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S-808XXC Datasheet, PDF (14/26 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR | |||
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Product specification
S-808xxC Series
 Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
(Ta=25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
âVDET

âVDET(S) âVDET(S) âVDET(S)
Ã0.98
Ã1.02
V
1
Release voltage
+VDET
S-80808 0.802 0.834 0.867
S-80809 0.910 0.944 0.979
S-80810 1.017 1.054 1.091
S-80811 1.125 1.164 1.203
S-80812 1.232 1.273 1.315
S-80813 1.340 1.383 1.427
S-80814 1.448 1.493 1.538
Hysteresis width
VHYS
S-80808 0.018 0.034 0.051
S-80809 0.028 0.044 0.061
S-80810 0.037 0.054 0.071
S-80811 0.047 0.064 0.081
S-80812 0.056 0.073 0.091
S-80813 0.066 0.083 0.101
S-80814 0.076 0.093 0.110
Current consumption
Operating voltage
Output current
Leakage current
Response time
ISS
VDD=1.5 V S-80808 to 09 
1.3
3.5
µA
2
VDD=2.0 V S-80810 to 14 
1.3
3.5
VDD

0.65

5.0
V
1
IOUT
Output transistor,
Nch, VDS=0.5 V, VDD=0.7 V
0.04
0.2

mA 3
ILEAK
Output transistor,
Nch, VDS=5.0 V, VDD=5.0 V


60
nA
tPLH



60
µs
1
Detection voltage
temperature
coefficient*2
â â VDET
âTa ⢠âVDET
Ta=â40 °C to +85 °C

±100 ±350 ppm/°C
*1. âVDET: Actual detection voltage value, âVDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) â â VDET mV/°C *1 = âVDET(S) Typ. V *2 à â â VDET ppm/°C *3 ÷ 1000
âTa
âTa ⢠âVDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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