MMBT3906L Datasheet, PDF (3/5 Pages) Taiwan Semiconductor Company, Ltd – 350mW, PNP Small Signal Transistor

Small Signal Product
MMBT3906L
Taiwan Semiconductor
h Parameters ( V_CE = -10 V_DC , f = 1.0 kHz , T_A = 25 ^oC )
1000
Fig. 7 Current Gain
Fig. 8 Output Admittance
100
100
10
0.1
1
10
I_C, Collector Current (mA)
Fig. 9 Input Impedance
100
10
1
0.1
0.1
1
10
I_C - Collector Current (mA)
Fig. 10 Voltage Feedback Ratio
10
10
1
1
0.1
0.1
1
I_C - Collector Current (mA)
Fig. 11 "ON" Voltages
1
0.8
0.6
V_CE @ I_C/I_B = 10
0.4
0.2
0
1
10
100
I_C - Collector Current (mA)
Document Number: DS_S1502001
10
1000
0.1
0.1
1
10
I_C - Collector Current (mA)
Fig. 12 Temperature Coefficients
1
0.5
0
-0.5
+25^oC to +125^oC
-1
-1.5
-2
0
Θ_VB for V_BE9sat)
-55^oC to +25^oC
20 40 60 80 100 120 140 160 180 200
I_C - Collector Current (mA)
Version: A15