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MMBT3906L Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 350mW, PNP Small Signal Transistor
Small Signal Product
MMBT3906L
Taiwan Semiconductor
350mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 8 mg (approximately)
- Marking Code: 3E.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD
350
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current
IC
-200
Thermal Resistance Junction-Ambient
RθJA
357
Junction and Storage Temperature Range
TJ , TSTG
-55 to + 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
UNIT
mW
V
V
V
mA
oC/W
oC
PARAMETER
Collector-Base Breakdown Voltage
IC = 10 μA IE = 0
Collector-Emitter Breakdown Voltage
IC = -1 mA IB = 0
Emitter-Base Breakdown Voltage
IE = -10 μA IC = 0
Collector Base Cut-off Current
VCB = -40 V
Emitter Base Cut-off Current
VEB = -6 V
DC Current Gain
VCE = -1 V
VCE = -1 V
VCE = -1 V
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
VCE = -1 V IC = -50 mA
VCE = -1 V IC = -100 mA
Collector-Emitter Saturation Voltage
IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA
Base-Emitter Saturation Voltage
IC = -10 mA IB = -1 mA
IC= -50 mA IB = -5 mA
Gain-Bandwidth Product VCE = -20 V IC = -10 mA f= 100MHz
Output Capacitance
VCB = -5 V
IE = 0
f= 1MHz
Delay time
Rise time
VCC = -3 V
VBE = -0.5 V IC = -10 mA
IB1 = -1.0 mA
Storage time
VCC = -3 V IC = -10 mA
Fall time
IB1 = IB2 = -1.0 mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
td
tr
ts
tf
MIN
-40
-40
-5
-
-
60
80
100
60
30
-
-
-0.65
-
250
-
-
-
-
-
MAX
-
-
-
-100
-50
UNIT
V
V
V
nA
nA
300
-0.25
-0.4
-0.85
-0.95
-
4.5
35
35
225
75
V
V
MHz
pF
ns
ns
ns
ns
Document Number: DS_S1502001
Version: A15