MMBT3906L Datasheet, PDF (2/5 Pages) Taiwan Semiconductor Company, Ltd – 350mW, PNP Small Signal Transistor

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T_A=25°C unless otherwise noted)
Fig. 1 Capacitance
10
Cibo
Cobo
1
0.1
1
10
100
Reverse Bias (V)
1000
100
10
1
1
Fig. 3 Turn - On Time
I_C/I_B = 10
1r @ V_CC = 3.0 V
15 V
40 V
2.0 V
1d @ V_OB = 0 V
10
100
I_C - Collector Current (mA)
1000
Fig. 5 Noise Figure vs. Frequency
5
Source Resistance = 200 Ω
I_C = 1.0 mA
4
Source Resistance = 2.0 KΩ
I_C = 0.5 mA
3
Source Resistance = 2.0 KΩ
I_C = 50μA
2
1
Source Resistance = 2.0 KΩ
I_C = 100 μA
0
0.1
1
10
100
f - Frequency (kHz)
Document Number: DS_S1502001
MMBT3906L
Taiwan Semiconductor
10000
Fig. 2 Charge Data
V_CC = 40 V
I_D/I_B = 10
QT
1000
100
10
1
1000
100
QA
10
100
I_C - Collector Current (mA)
1000
Fig. 4 Fall Time
V_CC = 40 V
I_B1 = I_B2
I_C/I_B = 20
10
I_C/I_B = 10
1
1
10
100
1000
I_C - Collector Current (mA)
12
10
8
6
4
2
0
0.1
Fig. 6 Noise Figure vs. Source Resistance
f = 1.0 kHz
I_C = 1.0 mA
I_C = 0.5 mA
I_C = 50 μA
I_C = 100 μA
1
10
100
Rg, Source Resistance (kOhms)
Version: A15