BC856A_14 Datasheet, PDF (3/6 Pages) Taiwan Semiconductor Company, Ltd – 200mW, PNP Small Signal Transistor

Small Signal Product
RATINGS AND CHARACTERISTIC CURVES
Fig. 1 Static Characteristic
50
45
I_B = -400μA
40
I_B = -350μA
35
I_B = -300μA
30
I_B = -250μA
25
I_B =- 200μA
20
I_B = -150μA
15
10
I_B = -100μA
5
I_B = -50μA
0
0 2 4 6 8 10 12 14 16 18 20
V_CE[V], Collector-Emitter Voltage
1000
100
Fig. 2 DC Current Gain
V_CE = - 5V
10
-0.1
-1.0
-10.0
I_C[mA], Collector Current
-100.0
Fig.3 Base-Emitter Saturation Voltage
VS.Collector-Emitter Saturation
10
I_C = 10 I_B
1
V_BE(sat)
-100.
-10.
Fig. 4 Base-Emitter On Voltage
V_CE = - 5V
V_CE(sat)
0.1
-1.
0.01
0.1
1
10
100
I_C[mA], Collector Current
Fig.5 Collector Output Capacitance
100
f=1MHz I_E=0
10
1
-1.
-10.
-100.
V_CB[V], Collector-Base Voltage
-1000.
-0.
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
V_BE[V], Base-Emitter Voltage
1000
Fig. 6 Current Gain Bandwidth Product
f=1MHz I_E=0
100
10
1
-0.
-1.
-10.
I_C[mA], Collector Current
-100.
Version : F14