BC856A_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 200mW, PNP Small Signal Transistor

BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product
Features
◇ Epitaxial planar die construction
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
Mechanical Data
◇ Case : SOT- 23 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Weight : 0.008 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Symbol
Power Dissipation
P_D
BC856
Collector-Base Voltage
BC857
V_CBO
BC858
BC856
Collector-Emitter Voltage
BC857
V_CEO
BC858
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
V_EBO
I_C
T_J , T_STG
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Value
200
-80
-50
-30
-65
-45
-30
-5
-0.1
-55 to + 150
Units
mW
V
V
V
A
°C
Version : F14