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| BC856A_14 Datasheet, PDF (2/6 Pages) Taiwan Semiconductor Company, Ltd – 200mW, PNP Small Signal Transistor | |||
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Small Signal Product
Electrical Characteristics ( TA= 25oC unless otherwise noted )
Parameter
Symbol
Min
BC856
-80
Collector-Base Breakdown Voltage
BC857
IC= -10μA
IE= 0
V(BR)CBO
-50
BC858
-30
BC856
-65
Collector-Emitter Breakdown Voltage
BC857
IC= -10mA
IB= 0
V(BR)CEO
-45
BC858
-30
Emitter-Base Breakdown Voltage
IE= -1μA
IC= 0
V(BR)EBO
-5
Collector Cut-off Current
BC856
BC857
VCB= -70V
-
VCB= -45V
IE= 0
ICBO
-
Emitter Cut-off Current
BC858
VCB= -25V
-
VEB= -5V
IC=0
IEBO
-
BC856A, BC857A, BC858A
125
DC Current Gain
BC856B, BC857B, BC858B
VCE= -5V
IC= -2mA
hFE
220
BC857C, BC858C
420
Collector-Emitter Saturation Voltage
IC= -100mA
IB= -5mA
VCE(sat)
-
Base-Emitter Saturation Voltage
IC= -100mA
IB= -5mA
VBE(sat)
-
Transition Frequency
VCE= -5V
IC= -10mA f= 100MHz
fT
100
Max
Units
-
V
-
-
-100
-100
-100
-0.1
250
475
800
-0.65
-1.1
-
V
V
nA
μA
V
V
MHz
Version : F14
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