TS8314 Datasheet, PDF (1/28 Pages) Taiwan Semiconductor Company, Ltd – Bi-directional N-Channel 2.5V Specified MicroSURF™

PRELIMINARY DATA SHEET
Battery Protection MicroSURF™
For information only
TS8314 – Bi-directional N-Channel 2.5V Specified MicroSURF™
General Description
Taiwan Semiconductor’s new low cost,
state of the art MicroSURF™ lateral
MOSFET process technology in chipscale
bondwireless packaging minimizes PCB
space and RDS(ON) plus provides an ultra-
low Qg X RDS(ON) figure of merit.
130 O
D
130 O
Features
MicroSURF™ for Battery Protection
• 6.5A, 20V RDS1(ON) equivalent = 15mΩ at 4.5 Volts
• 5.5A, 20V RDS1(ON) equivalent = 22mΩ at 2.5 Volts
Patent Pending
• Low profile package: less than 0.8mm height
when mounted on PCB.
• Occupies less than 1/5 the area of TSSOP-8.
G2 S1 S1
• Excellent thermal characteristics.
S2 S2 S2
• Integrated gate diodes provide ElectroStatic
Discharge (ESD) protection of 4000V Human
Body Model (HBM).
• Lead free solder bumps available.
S1 S1 S1
S2 S2 G1
Bottom: Bump Side
Absolute Maximum Ratings
Symbol Parameter
TA=25°C unless otherwise noted
Ratings
Units
VS1S2
Source1-Source2 Voltage
20
V
VGS
Gate-Source Voltage
+12 / -0.5
V
IS1S2
Source1-Source2 Current – Continuous
6.5
A
– Pulsed
13
PD
Power Dissipation (Steady State)
1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to +150
ºC
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJR
Thermal Resistance, Junction-to-Balls
82
°C/W
7
1
8/15/03 Rev3