TGS4301-EPU Datasheet, PDF (7/7 Pages) TriQuint Semiconductor – High Power Ka-Band Absorptive SPDT Switch

Advance Product Information
January 28, 2003
TGS4301-EPU
Assembly Process Notes
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
· Maximum stage temperature is 200 °C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
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