TGS4301-EPU Datasheet, PDF (2/7 Pages) TriQuint Semiconductor – High Power Ka-Band Absorptive SPDT Switch

Advance Product Information
January 28, 2003
TGS4301-EPU
TABLE I
MAXIMUM RATINGS
Symbol
V⁺
V^-
I⁺
P_IN
P_D
T_CH
T_M
T_STG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Input Continuous Wave Power
Power Dissipated
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Value
5V
-8 V
22.5 mA
TBD
TBD
150 °C
320 °C
-65 to 150 °C
Notes
2/, 3/
2/ 3/
3/
3/
5/
4/
1/ These ratings represent the maximum operable values for this device.
2/ V^+max and I^+max are both per bias pad.
3/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed P_D.
4/ When operated at this bias condition with a base plate temperature of 70 ⁰C, the
median life is reduced from TBD to TBD hours.
5/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
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